Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology (IONS4SET)

IONS4SET H2020 European Project aims at the production of extremely low-energy dissipation Single Electron Transistor quantum devices in the framework of CMOS technology for a straightforward integration into industrial processes.

Six European partners (HZDR, CEA-LETI, Fraunhofer IISB, CSIC-CNM, CNR-IMM and the University of Helsinki) cooperate in design, modelling, simulation, production and characterization of hybrid SET-CMOS devices: a perfect merging of Single Electron Transistors, granting low-power consumption, and CMOS technology, providing speed, performance and integrability. The state-of-the-art control on semiconductor quantum dot size and placement through ion irradiation-induced self-assembling processes will grant the achievement of the sub-5nm size required for room temperature operation. Such a breakthrough may pave the way to the wide diffusion of quantum-based electronics, actively enabling soon the Internet of Things, and making the advent of the so-called Second Quantum Revolution some steps closer.

The integration into industrial processes is a key element toward these goals, hence IONS4SET consortium is pleased to receive support from an Industry Board, which interacts with the partners. The members of IONS4SET Industry Board are representatives from Globalfoundries, STMicroelectronics and X-FAB.

For more information, see project description and contact us.

Project Details:

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European Union
Horizon 2020; RIA-Research and Innovation Action
H2020, ICT-25/2015: Generic micro- and nano-electronic technologies
Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany
4 years + 6 months extension

Link to CORDIS page for IONS4SET

Contact: IONS4SET Coordinator Dr. Johannes von Borany, Tel: +49-351-260 3378, email: , Helmholtz Zentrum Dresden Rossendorf (HZDR), Bautzner Landstraße 400, 01328 Dresden - Germany

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